Transistor Polarity
: N-Channel
Gate-Source Breakdown Voltage
: +/- 20 V
Configuration
: Single
Maximum Operating Temperature
: + 175 C
Mounting Style
: Through Hole
Packaging
: Tube
Package / Case
: TO-220AB
Resistance Drain-Source RDS (on)
: 0.025 Ohms
Continuous Drain Current
: 41 A
Drain-Source Breakdown Voltage
: 105 V
Features: * r DS(ON) = 25mW (Typ.), VGS = 10V, ID = 41A
* Qg(tot) = 28nC (Typ.), VGS = 10V
* Low Miller Charge
* Low QRR Body Diode
* Optimized efficiency at high frequencies
* UIS Capability (Single Pulse and Repetitive Pulse)
* Qualified to AEC Q101Application* DC/DC converters and Off-Line UPS
* Distributed Power Architectures and VRMs
* Primary Switch for 24V and 48V Systems
* High Voltage Synchronous Rectifier
* Direct Injection / Diesel Injection Systems
* 42V Automotive Load Control
* Electronic Valve Train SystemsSpecifications
|
Symbol |
Parameter |
Ratings |
Units |
|
VDSS |
Drain to Source Voltage |
105 |
V |
|
VGS |
Gate to Source Voltage |
20 |
V |
|
ID |
Drain Current |
41 |
A |
|
Continuous (TC = 25 , VGS = 10V) |
|
Continuous (TC = 100 , VGS = 10V) |
31 |
A |
|
Continuous (Tamb = 25 , VGS = 10V, RJA = 62/W) |
5.9 |
A |
|
Pulsed |
Figure 4 |
A |
|
EAS |
Single Pulse Avalanche Energy (Note 1) |
48 |
mJ |
|
PD |
Power dissipation |
135 |
W |
|
Derate above 25 |
0.9 |
W/ |
|
TJ , TSTG |
Operating and Storage Temperature |
-55to
175 |
|
Parameters: | Technical/Catalog Information | FDP3672 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 105V |
| Current - Continuous Drain (Id) @ 25° C | 41A |
| Rds On (Max) @ Id, Vgs | 33 mOhm @ 41A, 10V |
| Input Capacitance (Ciss) @ Vds | 1670pF @ 25V |
| Power - Max | 135W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 37nC @ 10V |
| Package / Case | TO-220AB |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDP3672
FDP3672
|
FDP3672 Data Sheet
