FDP3205

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 100 A
Drain-Source Breakdown Voltage : 55 V
Resistance Drain-Source RDS (on) : 0.0075 Ohms


Specifications

      

Product	Product status	Eco Status	Pricing*	Package type	Leads	Packing method	Package Drawing	Package Marking Convention**
FDP3205	Full Production	RoHS Compliant	$1.64	TO-220	3	RAIL	TBD	Line 1: $Y (Fairchild logo) &Z (Asm. Plant Code) &3 (3-Digit Date Code) &K Line 2: FDP3205

* Fairchild 1,000 piece Budgetary Pricing

** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

Package marking information for product FDP3205 is available. Click here for more information .

Description

This FDP3205 N-Channel MOSFET is produced using FairchildSemiconductor?s advanced PowerTrench process that hasbeen especially tailored to minimize the on-state resistanceand yet maintain superior switching performance.

Parameters:

Technical/Catalog Information	FDP3205
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	100A
Rds On (Max) @ Id, Vgs	7.5 mOhm @ 59A, 10V
Input Capacitance (Ciss) @ Vds	7730pF @ 25V
Power - Max	150W
Packaging	Tube
Gate Charge (Qg) @ Vgs	120nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDP3205 FDP3205