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FDG6318PZ

MOSFET Dual PCh Digital

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SeekIC No. : 00145994 Detail

FDG6318PZ: MOSFET Dual PCh Digital

FDG6318PZ Data Sheet

floor Price/Ceiling Price

US $ .13~.29 / Piece | Get Latest Price
Part Number:
FDG6318PZ
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 100~250
  • Unit Price
  • $.29
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  • Processing time
  • 15 Days
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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 20 V
Gate-Source Breakdown Voltage : +/- 12 V Continuous Drain Current : 0.5 A
Resistance Drain-Source RDS (on) : 780 mOhms Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SC-70-6 Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Configuration : Dual
Gate-Source Breakdown Voltage : +/- 12 V
Package / Case : SC-70-6
Continuous Drain Current : 0.5 A
Resistance Drain-Source RDS (on) : 780 mOhms


Features:

• -0.5A, -20V. rDS(ON) = 780mΩ (Max)@ VGS = -4.5 V rDS(ON) = 1200mΩ (Max) @ VGS = -2.5 V
• Very low level gate drive requirements allowing direct operation in 3V circuits (VGS(TH) < 1.5V).
• Gate-Source Zener for ESD ruggedness (>1.4kV Human Body Model).
• Compact industry standard SC-70-6 surface mount package.


Pinout

Connection Diagram


Specifications

Symbol
Parameter
 Ratings
Units
VDSS
VGSS
 Drain-Source Voltage
Gate-Source Voltage
-20
±12
-0.5
-0.3
Figure 4
0.3
2.4
-55 to 150
1.4
V
V
A
A

W
mW/oC
oC
kV
ID
 Drain Current
Continuous (TC = 25oC, VGS = - 4.5V)
Continuous (TC = 100oC, VGS = - 2.5V) Pulsed
PD
 Power dissipation
Derate above 25°C
TJ, TSTG
 Operating and Storage Junction Temperature Range

ESD

 Electrostatic Discharge Rating MIL-STD-883D
Human Body Model ( 100pF / 1500Ω )



Description

These FDG6318PZ dual P-Channel logic level enhancement mode MOSFET are produced using Fairchild Semiconductor's especially tailored to minimize on-state resistance. This device has been designed especially for bipolar digital transistors and small signal MOSFETS




Parameters:

Technical/Catalog InformationFDG6318PZ
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 P-Channel (Dual)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C500mA
Rds On (Max) @ Id, Vgs780 mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) @ Vds 85.4pF @ 10V
Power - Max300mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs1.62nC @ 4.5V
Package / CaseSC-70-6, SC-88, SOT-323-6, SOT-363
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDG6318PZ
FDG6318PZ



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