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FDG6316P

MOSFET P-Ch PowerTrench Specified 1.8V

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SeekIC No. : 00150110 Detail

FDG6316P: MOSFET P-Ch PowerTrench Specified 1.8V

FDG6316P Data Sheet

floor Price/Ceiling Price

US $ .13~.3 / Piece | Get Latest Price
Part Number:
FDG6316P
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 12 V
Gate-Source Breakdown Voltage : +/- 8 V Continuous Drain Current : 0.7 A
Resistance Drain-Source RDS (on) : 0.27 Ohms Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SC-70-6 Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Configuration : Dual
Gate-Source Breakdown Voltage : +/- 8 V
Drain-Source Breakdown Voltage : - 12 V
Package / Case : SC-70-6
Resistance Drain-Source RDS (on) : 0.27 Ohms
Continuous Drain Current : 0.7 A


Features:

• 0.7 A, 12 V. RDS(ON) = 270 mΩ @ VGS = 4.5 V RDS(ON) = 360 mΩ @ VGS = 2.5 V RDS(ON) = 650 mΩ @ VGS = 1.8 V
• Low gate charge
• High performance trench technology for extremely low RDS(ON)
• Compact industry standard SC70-6 surface mount package


Application

• Battery management
• Load switch


Pinout

Connection Diagram


Specifications

Symbol
Parameter
Ratings
Units
VDSS
VGSS
 Drain-Source Voltage
Gate-Source Voltage
12
± 8
0.7
1.8
0.3
55 to +150
V
V
A

W
°C
ID
 Drain Current Continuous
Pulsed		 (Note 1)
PD
 Maximum Power Dissipation (Note 1)
TJ,TSTG Operating and Storage Junction Temperature Range



Description

This FDG6316P P-Channel 1.8V specified MOSFET uses Fairchild's advanced low voltage PowerTrench process. It has been optimized for battery power management applications.




Parameters:

Technical/Catalog InformationFDG6316P
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 P-Channel (Dual)
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25° C700mA
Rds On (Max) @ Id, Vgs270 mOhm @ 700mA, 4.5V
Input Capacitance (Ciss) @ Vds 146pF @ 6V
Power - Max300mW
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs2.4nC @ 4.5V
Package / CaseSC-70-6, SOT-323-6
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDG6316P
FDG6316P
FDG6316PDKR ND
FDG6316PDKRND
FDG6316PDKR



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