FDG6313N

MOSFET 25V Dual N-Ch Digital

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FDG6313N Picture
SeekIC No. : 00164009 Detail

FDG6313N: MOSFET 25V Dual N-Ch Digital

floor Price/Ceiling Price

Part Number:
FDG6313N
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 25 V
Gate-Source Breakdown Voltage : 8 V Continuous Drain Current : 0.5 A
Resistance Drain-Source RDS (on) : 0.34 Ohms Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SC-70-6 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 25 V
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Configuration : Dual
Gate-Source Breakdown Voltage : 8 V
Resistance Drain-Source RDS (on) : 0.34 Ohms
Package / Case : SC-70-6
Continuous Drain Current : 0.5 A


Features:

·25 V, 0.50 A continuous, 1.5 A peak. RDS(ON) = 0.45 Ω @ VGS= 4.5 V, RDS(ON) =0.60 Ω @ VGS= 2.7 V.
·Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V).
·Gate-Source Zener for ESD ruggedness (>6kV Human Body Model).
·Compact industry standard SC70-6 surface mount package.



Pinout

  Connection Diagram


Specifications

Symbol
Parameter
FDG6303N
Units
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
25
0.5
1.5
0.3
-55 to 150
6.0
- 0.5 to +8
V
V
A

W
°C
kV
ID
Drain Current Continuous
Pulsed
PD
Power Dissipation for Single Operation (Note 1)
TJ,TSTG
ESD
Operating and Storage Junction Temperature Range
Electrostatic Discharge Rating MIL-STD-883D Human Body
Model (100pf/1500O)

THERMAL CHARACTERISTICS
RJA Thermal Resistance, Junction-to-Ambient
415
°C/W



Description

These FDG6313N dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.




Parameters:

Technical/Catalog InformationFDG6313N
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25° C500mA
Rds On (Max) @ Id, Vgs450 mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) @ Vds 50pF @ 10V
Power - Max300mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs2.3nC @ 4.5V
Package / CaseSC-70-6, SC-88, SOT-323-6, SOT-363
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDG6313N
FDG6313N



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