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FDG6308P

MOSFET Dual P-Ch 1.8V Spec Power Trench

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SeekIC No. : 00148256 Detail

FDG6308P: MOSFET Dual P-Ch 1.8V Spec Power Trench

FDG6308P Data Sheet

floor Price/Ceiling Price

US $ .22~.41 / Piece | Get Latest Price
Part Number:
FDG6308P
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 100~250
  • Unit Price
  • $.41
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  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 20 V
Gate-Source Breakdown Voltage : +/- 8 V Continuous Drain Current : 0.6 A
Resistance Drain-Source RDS (on) : 0.4 Ohms Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SC-70-6 Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Configuration : Dual
Gate-Source Breakdown Voltage : +/- 8 V
Package / Case : SC-70-6
Resistance Drain-Source RDS (on) : 0.4 Ohms
Continuous Drain Current : 0.6 A


Features:

• 0.6 A, 20 V. RDS(ON) = 0.40 Ω @ VGS = 4.5 V RDS(ON) = 0.55 Ω @ VGS = 2.5 V RDS(ON) = 0.80 Ω @ VGS = 1.8 V
• Low gate charge
• High performance trench technology for extremely low RDS(ON)
• Compact industry standard SC70-6 surface mount package


Application

• Battery management
• Load switch


Pinout

Connection Diagram


Specifications

Symbol
Parameter
Ratings
Units
VDSS
VGSS
 Drain-Source Voltage
Gate-Source Voltage
20
± 8
0.6
1.8
0.3
55 to +150
V
V
A

W
°C
ID
 Drain Current Continuous
Pulsed		 (Note 1)
PD
 Maximum Power Dissipation (Note 1)
TJ,TSTG Operating and Storage Junction Temperature Range



Description

This FDG6308P P-Channel 1.8V specified MOSFET uses Fairchild's advanced low voltage PowerTrench process. It has been optimized for battery power management applications.




Parameters:

Technical/Catalog InformationFDG6308P
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 P-Channel (Dual)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C600mA
Rds On (Max) @ Id, Vgs400 mOhm @ 600mA, 4.5V
Input Capacitance (Ciss) @ Vds 153pF @ 10V
Power - Max300mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs2.5nC @ 4.5V
Package / CaseSC-70-6, SC-88, SOT-323-6, SOT-363
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDG6308P
FDG6308P



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