FDG6304P

MOSFET SC70-6 P-CH -25V

product image

FDG6304P Picture
SeekIC No. : 00149450 Detail

FDG6304P: MOSFET SC70-6 P-CH -25V

floor Price/Ceiling Price

US $ .16~.28 / Piece | Get Latest Price
Part Number:
FDG6304P
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.28
  • $.24
  • $.19
  • $.16
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/21

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 25 V
Gate-Source Breakdown Voltage : - 8 V Continuous Drain Current : 0.41 A
Resistance Drain-Source RDS (on) : 1.1 Ohms Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SC-70-6 Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Configuration : Dual
Package / Case : SC-70-6
Drain-Source Breakdown Voltage : - 25 V
Gate-Source Breakdown Voltage : - 8 V
Resistance Drain-Source RDS (on) : 1.1 Ohms
Continuous Drain Current : 0.41 A


Features:

·-25 V, -0.41 A continuous, -1.5 A peak.
·RDS(ON) = 1.1 W @ VGS= -4.5 V,
·RDS(ON) = 1.5 W @ VGS= -2.7 V.
·Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V).
·Gate-Source Zener for ESD ruggedness (>6kV Human Body Model).
·Compact industry standard SC70-6 surface mount package.



Pinout

  Connection Diagram


Specifications

Symbol
Parameter
Ratings
Units
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
-25
-8
-0.41
-1.5
0.3
-55 to 150
6.0
V
V

A

W
°C
kV
ID
Drain Current Continuous
Pulsed
PD
Power Dissipation for Single Operation
TJ, TSTG
Operating and Storage Junction Temperature Range

ESD

Electrostatic Discharge Rating MIL-STD-883D
Human Body Model ( 100pF / 1500Ω )

THERMAL CHARACTERISTICS
RJA Thermal Resistance, Junction-to-Ambient (Note 1) 415 °C/W



Description

These FDG6304P dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device FDG6304P has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.




Parameters:

Technical/Catalog InformationFDG6304P
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 P-Channel (Dual)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25° C410mA
Rds On (Max) @ Id, Vgs1.1 Ohm @ 410mA, 4.5V
Input Capacitance (Ciss) @ Vds 62pF @ 10V
Power - Max300mW
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs1.5nC @ 4.5V
Package / CaseSC-70-6
FET Feature*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDG6304P
FDG6304P
FDG6304PCT ND
FDG6304PCTND
FDG6304PCT



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Industrial Controls, Meters
Circuit Protection
Isolators
Test Equipment
LED Products
View more