MOSFET SC70-6 P-CH -25V
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 25 V | ||
Gate-Source Breakdown Voltage : | - 8 V | Continuous Drain Current : | 0.41 A | ||
Resistance Drain-Source RDS (on) : | 1.1 Ohms | Configuration : | Dual | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SC-70-6 | Packaging : | Reel |
Symbol |
Parameter |
Ratings |
Units |
VDSS VGSS |
Drain-Source Voltage Gate-Source Voltage |
-25 -8 -0.41 -1.5 0.3 -55 to 150 6.0 |
V V A W °C kV |
ID |
Drain Current Continuous Pulsed | ||
PD |
Power Dissipation for Single Operation | ||
TJ, TSTG |
Operating and Storage Junction Temperature Range | ||
ESD |
Electrostatic Discharge Rating MIL-STD-883D Human Body Model ( 100pF / 1500Ω ) |
RJA | Thermal Resistance, Junction-to-Ambient (Note 1) | 415 | °C/W |
These FDG6304P dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device FDG6304P has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.
Technical/Catalog Information | FDG6304P |
Vendor | Fairchild Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | 2 P-Channel (Dual) |
Drain to Source Voltage (Vdss) | 25V |
Current - Continuous Drain (Id) @ 25° C | 410mA |
Rds On (Max) @ Id, Vgs | 1.1 Ohm @ 410mA, 4.5V |
Input Capacitance (Ciss) @ Vds | 62pF @ 10V |
Power - Max | 300mW |
Packaging | Cut Tape (CT) |
Gate Charge (Qg) @ Vgs | 1.5nC @ 4.5V |
Package / Case | SC-70-6 |
FET Feature | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDG6304P FDG6304P FDG6304PCT ND FDG6304PCTND FDG6304PCT |