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FDG327N

MOSFET 20V N-Ch PowerTrench

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SeekIC No. : 00149404 Detail

FDG327N: MOSFET 20V N-Ch PowerTrench

FDG327N Data Sheet

floor Price/Ceiling Price

US $ .17~.28 / Piece | Get Latest Price
Part Number:
FDG327N
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Unit Price
  • $.28
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  • Processing time
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Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V Continuous Drain Current : 1.5 A
Resistance Drain-Source RDS (on) : 90 mOhms Configuration : Single Quad Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SC-70-6 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V
Continuous Drain Current : 1.5 A
Resistance Drain-Source RDS (on) : 90 mOhms
Package / Case : SC-70-6
Configuration : Single Quad Drain


Features:

· 1.5 A, 20 V. RDS(ON) = 90 mW @ VGS = 4.5 V. RDS(ON) = 100 mW @ VGS = 2.5 V RDS(ON) = 140 mW @ VGS = 1.8 V
· Fast switching speed
· Low gate charge (4.5 nC typical)
· High performance trench technology for extremely low RDS(ON)
· High power and current handling capability.


Application

· DC/DC converter
· Power management
· Load switch


Pinout

Connection Diagram


Specifications

Symbol
Parameter
Ratings
Units
VDSS
VGSS
 Drain-Source Voltage
Gate-Source Voltage
20
± 8
1.5
6
0.42
0.38
-55 to +150
V
V
A

W

°C
ID
 Drain Current Continuous
Pulsed		 (Note 1a)
PD
 Power Dissipation for Single Operation (Note 1a)
(Note 1b)
TJ,TSTG Operating and Storage Junction Temperature Range



Description

This FDG327N N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and gate charge (QG) in a small package.




Parameters:

Technical/Catalog InformationFDG327N
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C1.5A
Rds On (Max) @ Id, Vgs90 mOhm @ 1.5A, 4.5V
Input Capacitance (Ciss) @ Vds 423pF @ 10V
Power - Max380mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs6.3nC @ 4.5V
Package / CaseSC-70-6, SC-88, SOT-323-6, SOT-363
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDG327N
FDG327N



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