FDG316P

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : - 30 V
Package / Case : SC-70-6
Configuration : Single Quad Drain
Continuous Drain Current : 1.6 A
Resistance Drain-Source RDS (on) : 0.16 Ohms


Features:

• -1.6 A, -30 V. R_DS(ON) = 0.19 Ω @ V_GS = -10 V R_DS(ON) = 0.30 Ω @ V_GS = -4.5 V.
• Low gate charge (3.5nC typical).
• High performance trench technology for extremely low RDS(ON).
• Compact industry standard SC70-6 surface mount package.


Application

• DC/DC converter
• Load switch
• Power Management


Pinout




Specifications

Symbol	Parameter		Ratings	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage		-30 ±20 -1.6 -6 0.75 0.48 -55 to +150	V V A W °C
ID	Drain Current Continuous Pulsed	(Note 1a)
PD	Power Dissipation for Single Operation	(Note 1a) (Note 1b)
TJ,TSTG	Operating and Storage Junction Temperature Range

Description

This FDG316P P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

These FDG316P devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Parameters:

Technical/Catalog Information	FDG316P
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	1.6A
Rds On (Max) @ Id, Vgs	190 mOhm @ 1.6A, 10V
Input Capacitance (Ciss) @ Vds	165pF @ 15V
Power - Max	480mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	5nC @ 10V
Package / Case	SC-70-6, SC-88, SOT-323-6, SOT-363
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDG316P FDG316P