MOSFET Integrated P-Channel
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 20 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | - 3.3 A | ||
Resistance Drain-Source RDS (on) : | 0.125 Ohms | Configuration : | Single Dual Drain | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SO-8 | Packaging : | Reel |