FDFS2P102

MOSFET Integrated P-Channel

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FDFS2P102 Picture
SeekIC No. : 00151910 Detail

FDFS2P102: MOSFET Integrated P-Channel

floor Price/Ceiling Price

US $ .29~.58 / Piece | Get Latest Price
Part Number:
FDFS2P102
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.58
  • $.44
  • $.33
  • $.29
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/10/5

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 20 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : - 3.3 A
Resistance Drain-Source RDS (on) : 0.125 Ohms Configuration : Single Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SO-8 Packaging : Reel    

Description

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Package / Case : SO-8
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Configuration : Single Dual Drain
Resistance Drain-Source RDS (on) : 0.125 Ohms
Continuous Drain Current : - 3.3 A


Features:

• 3.3 A, 20 V. RDS(ON) = 0.125 Ω @ VGS = 10 V RDS(ON) = 0.200 Ω @ VGS = 4.5 V.
• VF < 0.39 V @ 1 A (TJ = 125 oC).
VF < 0.47 V @ 1 A.
VF < 0.58 V @ 2 A.
• Schottky and MOSFET incorporated into single power surface mount SO-8 package.
• Electrically independent Schottky and MOSFET pinout for design flexibility.



Application

• DC/DC converters
• Load Switch
• Motor Drives



Pinout

  Connection Diagram


Specifications

Symbol
Parameter
Ratings
Units
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
-20
±20
-3.3
-20
2
1.6
1
0.9
-55 to +150
V
V
ID
Drain Current - Continuous
- Pulsed

(Note 1a)

A
PD
Power Dissipation for Dual Operation
(Note 1a)
(Note 1b)
(Note 1c)
W
Power Dissipation for Single Operation
TJ, TSTG
Operating and Storage Temperature Range
°C



Description

The FDFS2P102 combines the exceptional performance of Fairchild's high cell density MOSFET with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.

This FDFS2P102 device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies.




Parameters:

Technical/Catalog InformationFDFS2P102
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C3.3A
Rds On (Max) @ Id, Vgs125 mOhm @ 3.3A, 10V
Input Capacitance (Ciss) @ Vds 270pF @ 10V
Power - Max900mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs10nC @ 10V
Package / Case8-SOIC
FET FeatureDiode (Isolated)
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDFS2P102
FDFS2P102
FDFS2P102TR ND
FDFS2P102TRND
FDFS2P102TR



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