MOSFET Integrated P-Channel
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 20 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | - 3.3 A | ||
Resistance Drain-Source RDS (on) : | 0.125 Ohms | Configuration : | Single Dual Drain | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SO-8 | Packaging : | Reel |
Symbol |
Parameter |
Ratings |
Units | |
VDSS VGSS |
Drain-Source Voltage Gate-Source Voltage |
-20 ±20 -3.3 -20 2 1.6 1 0.9 -55 to +150 |
V V | |
ID |
Drain Current - Continuous - Pulsed |
(Note 1a) |
A | |
PD |
Power Dissipation for Dual Operation |
(Note 1a) (Note 1b) (Note 1c) |
W | |
Power Dissipation for Single Operation | ||||
TJ, TSTG |
Operating and Storage Temperature Range |
°C |
The FDFS2P102 combines the exceptional performance of Fairchild's high cell density MOSFET with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.
This FDFS2P102 device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies.
Technical/Catalog Information | FDFS2P102 |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | P-Channel |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 3.3A |
Rds On (Max) @ Id, Vgs | 125 mOhm @ 3.3A, 10V |
Input Capacitance (Ciss) @ Vds | 270pF @ 10V |
Power - Max | 900mW |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 10nC @ 10V |
Package / Case | 8-SOIC |
FET Feature | Diode (Isolated) |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDFS2P102 FDFS2P102 FDFS2P102TR ND FDFS2P102TRND FDFS2P102TR |