MOSFET 100V NCh PowerTrench
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 34 A | ||
Resistance Drain-Source RDS (on) : | 0.022 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-252AA | Packaging : | Reel |
Symbol | Parameter | Ratings | Units |
VDSS | Drain-Source Voltage | 100 | V |
VGSS | Gate-Source Voltage | ±20 | V |
ID | Drain Current Continuous Drain Current Pulsed |
34 | A |
100 | |||
PD | Power Dissipation @TC=25°C (Note 3) @TA=25°C (Note 1a @TA=25°C (Note 1b) |
70 | W |
3.2 | |||
1.3 | |||
TJ, TSTG | Operating and Storage Junction Temperature Range | 55 to +150 | °C |
This FDD3670 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
These MOSFETs FDD3670 feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
The result is a MOSFET FDD3670 that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Technical/Catalog Information | FDD3670 |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25° C | 34A |
Rds On (Max) @ Id, Vgs | 32 mOhm @ 7.3A, 10V |
Input Capacitance (Ciss) @ Vds | 2490pF @ 50V |
Power - Max | 1.6W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 80nC @ 10V |
Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDD3670 FDD3670 |