MOSFET SPECIFIED POWER TR 1.8V PCH
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 12 V | ||
Gate-Source Breakdown Voltage : | +/- 8 V | Continuous Drain Current : | 6.7 A | ||
Resistance Drain-Source RDS (on) : | 0.028 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-252AA | Packaging : | Reel |
Symbol |
Parameter |
Ratings |
Units | |
VDSS VGSS |
Drain-Source Voltage Gate-Source Voltage |
12 ±8 6.7 54 52 3.8 1.6 55 to +175 |
V V A W °C | |
ID |
Drain Current Continuous Pulsed |
(Note 3) (Note 1a) | ||
PD |
Power Dissipation for Single Operation | (Note 1) (Note 1a) (Note 1b) | ||
TJ,TSTG | Operating and Storage Junction Temperature Range |
RJC RJA RJA |
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient |
(Note 1) (Note 1a) (Note 1b) |
2.9 40 96 |
°C/W °C/W °C/W |
Technical/Catalog Information | FDD306P |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | P-Channel |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25° C | 6.7A |
Rds On (Max) @ Id, Vgs | 28 mOhm @ 6.7A, 4.5V |
Input Capacitance (Ciss) @ Vds | 1290pF @ 6V |
Power - Max | 1.6W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 21nC @ 4.5V |
Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDD306P FDD306P |