MOSFET 80V Dual N & P-Chan PowerTrench
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 80 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 4.3 A, - 2.8 A | ||
Resistance Drain-Source RDS (on) : | 0.08 Ohms | Configuration : | Dual Common Drain Dual Source | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-252 | Packaging : | Reel |
Technical/Catalog Information | FDD3510H |
Vendor | Fairchild Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N and P-Channel |
Drain to Source Voltage (Vdss) | 80V |
Current - Continuous Drain (Id) @ 25° C | 4.3A, 2.8A |
Rds On (Max) @ Id, Vgs | 80 mOhm @ 4.3A, 10V |
Input Capacitance (Ciss) @ Vds | 800pF @ 40V |
Power - Max | 1.3W |
Packaging | Cut Tape (CT) |
Gate Charge (Qg) @ Vgs | 18nC @ 10V |
Package / Case | DPak, TO-252 (4 leads + tab) |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDD3510H FDD3510H FDD3510HCT ND FDD3510HCTND FDD3510HCT |