MOSFET 200V 1.1A N-CH POWERTRENCH
FDC2612_F095: MOSFET 200V 1.1A N-CH POWERTRENCH
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 200 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 1.1 A | ||
Resistance Drain-Source RDS (on) : | 725 mOhms | Configuration : | Single Quad Drain | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SuperSOT-6 | Packaging : | Reel |
Technical/Catalog Information | FDC2612_F095 |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25° C | 1.1A |
Rds On (Max) @ Id, Vgs | 725 mOhm @ 1.1A, 10V |
Input Capacitance (Ciss) @ Vds | 234pF @ 100V |
Power - Max | 800mW |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 11nC @ 10V |
Package / Case | SuperSOT-6 |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDC2612_F095 FDC2612_F095 |