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SeekIC No. : 00164736 Detail

FDB5800_F085: MOSFET 60V N-Ch PowerTrench

FDB5800_F085 Data Sheet

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Part Number:: FDB5800_F085
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/10/30

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MOSFET 60V N-Channel Power Trench

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	60 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	80 A
Resistance Drain-Source RDS (on) :	0.0055 Ohms at 10 V	Configuration :	Single
Maximum Operating Temperature :	+ 175 C	Mounting Style :	SMD/SMT
Package / Case :	D2PAK	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : D2PAK
Continuous Drain Current : 80 A
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 0.0055 Ohms at 10 V

Parameters:

Technical/Catalog Information	FDB5800_F085
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	80A
Rds On (Max) @ Id, Vgs	6 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds	6625pF @ 15V
Power - Max	242W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	135nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDB5800_F085 FDB5800_F085

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FDB5800_F085

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