MOSFET 60V N-Channel Power Trench
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 60 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 32 A | ||
Resistance Drain-Source RDS (on) : | 0.027 Ohms at 10 V | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-263 | Packaging : | Reel |
Symbol |
Parameter |
FDP5690 |
FDB5690 |
Units |
VDSS |
Drain-Source Voltage |
80 |
V | |
VGSS |
Gate-Source Voltage |
± 20 |
V | |
ID |
Drain Current - Continuous
- Pulsed |
32 |
A | |
100 | ||||
PD |
Total Power Dissipation @ TC = 25
|
58 |
W | |
Derate above 25 |
0.4 |
W/°C | ||
TJ, Tstg |
Operating and Storage Temperature Range |
-65 to +175 |
°C |
This FDB5690 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
These MOSFETs FDB5690 feature faster switching and lower gate charge than other MOSFETs with comparable RDS(on) specifications resulting in DC/DC power supply designs with higher overall efficiency.
Technical/Catalog Information | FDB5690 |
Vendor | Fairchild Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25° C | 32A |
Rds On (Max) @ Id, Vgs | 27 mOhm @ 16A, 10V |
Input Capacitance (Ciss) @ Vds | 1120pF @ 25V |
Power - Max | 58W |
Packaging | Digi-Reel? |
Gate Charge (Qg) @ Vgs | 33nC @ 10V |
Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDB5690 FDB5690 FDB5690DKR ND FDB5690DKRND FDB5690DKR |