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FDB3860

MOSFET 100/20V N Chan PowerTrench

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SeekIC No. : 00152438 Detail

FDB3860: MOSFET 100/20V N Chan PowerTrench

FDB3860 Data Sheet

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Part Number:
FDB3860
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/30

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 6.4 A
Resistance Drain-Source RDS (on) : 0.037 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : D2PAK Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Package / Case : D2PAK
Maximum Operating Temperature : + 150 C
Resistance Drain-Source RDS (on) : 0.037 Ohms
Continuous Drain Current : 6.4 A


Parameters:

Technical/Catalog InformationFDB3860
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C6.4A
Rds On (Max) @ Id, Vgs37 mOhm @ 5.9A, 10V
Input Capacitance (Ciss) @ Vds 1740pF @ 50V
Power - Max3.1W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs30nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDB3860
FDB3860
FDB3860DKR ND
FDB3860DKRND
FDB3860DKR



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