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FDB33N25

Features: • 33A, 250V, R DS(ON)= 0.094Ω @VGS = 10 V• Low gate charge ( typical 36.8 nC)• Low Crss ( typical 39 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter FDB33N25 Units VDSS ...

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SeekIC No. : 004341039 Detail

FDB33N25: Features: • 33A, 250V, R DS(ON)= 0.094Ω @VGS = 10 V• Low gate charge ( typical 36.8 nC)• Low Crss ( typical 39 pF)• Fast switching• 100% avalanche tested• I...

FDB33N25 Data Sheet

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Part Number:
FDB33N25
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/3/13

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Product Details

Description



Features:

• 33A, 250V, R DS(ON)= 0.094Ω @VGS = 10 V
• Low gate charge ( typical 36.8 nC)
• Low Crss ( typical  39 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol
Parameter
FDB33N25
Units
VDSS
Drain-Source Voltage
250
V
ID
Drain Current - Continuous (TC = 25°C)
                      - Continuous (TC  = 100°C)
33
20.4
A
A
IDM
Drain Current - Pulsed                (Note 1)
132
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy (Note 2) 
918
mJ
IAR
Avalanche Current                      (Note 1)
33
A
EAR
Repetitive Avalanche Energy      (Note 1)                                        
23.5
mJ
dv/dt
Peak Diode Recovery dv/dt         (Note 3)
4.5
V/ns
PD
Power Dissipation (TC = 25°C)
                             - Derate above 25°C
235
1.89
W
W/°C
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
°C
TL
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds
300
°C




Description

These FDB33N25 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe,DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices FDB33N25 are well suited for high efficient switched mode power supplies and active power factor correction.




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