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FDB3682

MOSFET 100V N-Channel Pwr Trench

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SeekIC No. : 00148132 Detail

FDB3682: MOSFET 100V N-Channel Pwr Trench

FDB3682 Data Sheet

floor Price/Ceiling Price

US $ .57~.85 / Piece | Get Latest Price
Part Number:
FDB3682
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.85
  • $.76
  • $.65
  • $.57
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 32 A
Resistance Drain-Source RDS (on) : 0.032 Ohms at 10 V Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Package / Case : TO-263
Continuous Drain Current : 32 A
Resistance Drain-Source RDS (on) : 0.032 Ohms at 10 V


Features:

• r DS(ON) = 32mΩ (Typ.), VGS = 10V, ID = 32A
• Q g(tot) = 18.5nC (Typ.), VGS = 10V
• Low Miller Charge
• Low QRR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101


Application

• DC/DC converters and Off-Line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V Systems
• High Voltage Synchronous Rectifier
• Direct Injection / Diesel Injection System
• 42V Automotive Load Control
• Electronic Valve Train System


Specifications

Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
100
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current
Continuous (TC = 25, VGS = 10V)
        32
A
Continuous (TC = 100, VGS = 10V)
23
A
Continuous (Tamb = 25, VGS = 10V, RJA = 43/W)
6
A
Pulsed
Figure 4
A
EAS
Single Pulse Avalanche Energy (Note 1)
55
mJ
PD
Power dissipation
95
W
Derate above 25
0.63
W/°C
TJ, Tstg
Operating and Storage Temperature
-55 to 175
°C



Parameters:

Technical/Catalog InformationFDB3682
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C32A
Rds On (Max) @ Id, Vgs36 mOhm @ 32A, 10V
Input Capacitance (Ciss) @ Vds 1250pF @ 25V
Power - Max95W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs28nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDB3682
FDB3682



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