FDB3672

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Continuous Drain Current : 44 A
Package / Case : TO-263AB
Resistance Drain-Source RDS (on) : 0.024 Ohms at 10 V


Features:

•r_DS(ON) = 24mΩ (Typ.), V_GS = 10V, I_D = 44A
•Q_g(tot) = 24nC (Typ.), V_GS = 10V
•Low Miller Charge
•Low Q_RR Body Diode
•Optimized efficiency at high frequencies
•UIS Capability (Single Pulse and Repetitive Pulse)
•Qualified to AEC Q101


Application

• DC/DC converters and Off-Line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V Systems
• High Voltage Synchronous Rectifier
• Direct Injection / Diesel Injection Systems
• 42V Automotive Load Control
• Electronic Valve Train Systems


Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	100	V
VGSS	Gate-Source Voltage	±20	V
ID	Drain Current Continuous (TC = 25, VGS = 10V)	44	A
	Continuous (TC = 100, VGS = 10V)	31	A
	Continuous (Tamb = 25, VGS = 10V, RJA = 43/W)	7.2	A
	Pulsed	Figure 4	A
EAS	Single Pulse Avalanche Energy (Note 1)	120	mJ
PD	Power dissipation	120	W
	Derate above 25	0.8	W/°C
TJ, Tstg	Operating and Storage Temperature	-55 to 175	°C

Parameters:

Technical/Catalog Information	FDB3672
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	44A
Rds On (Max) @ Id, Vgs	28 mOhm @ 44A, 10V
Input Capacitance (Ciss) @ Vds	1710pF @ 25V
Power - Max	120W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	31nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDB3672 FDB3672