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FDB3652_Q

MOSFET N-Channel PowerTrench

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SeekIC No. : 00164936 Detail

FDB3652_Q: MOSFET N-Channel PowerTrench

FDB3652_Q Data Sheet

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Part Number:
FDB3652_Q
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 61 A
Resistance Drain-Source RDS (on) : 0.014 Ohms at 10 V Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Package / Case : TO-263
Continuous Drain Current : 61 A
Resistance Drain-Source RDS (on) : 0.014 Ohms at 10 V


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