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FDB3652_F085

MOSFET N-Ch PowerTrench Trench Mos.

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SeekIC No. : 00159547 Detail

FDB3652_F085: MOSFET N-Ch PowerTrench Trench Mos.

FDB3652_F085 Data Sheet

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Part Number:
FDB3652_F085
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 61 A
Resistance Drain-Source RDS (on) : 16 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263AB Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Resistance Drain-Source RDS (on) : 16 mOhms
Continuous Drain Current : 61 A
Package / Case : TO-263AB


Parameters:

Technical/Catalog InformationFDB3652_F085
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C61A
Rds On (Max) @ Id, Vgs16 mOhm @ 61A, 10V
Input Capacitance (Ciss) @ Vds 2880pF @ 25V
Power - Max150W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs53nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDB3652_F085
FDB3652_F085



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