FDB14AN06LA0

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 60 A
Package / Case : TO-263AB
Resistance Drain-Source RDS (on) : 0.0128 Ohms at 10 V


Features:

*r_DS(ON)  = 12.8m  (Typ.), V_GS = 5V, I_D = 60A 
*Q_g (tot) = 24nC (Typ.), V_GS = 5V
* Low Miller Charge
*Low Q_RR Body Diode
* UIS Capability (Single Pulse and Repetitive Pulse)
* Qualified to AEC Q101
Formerly developmental type 83557


Application

* Motor / Body Load Control
* ABS Systems
* Powertrain Management
* Injection Systems
* DC-DC converters and Off-line UPS
* Distributed Power Architectures and VRMs
* Primary Switch for 12V and 24V systems


Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain to Source Voltage	60	V
VGS	Gate to Source Voltage	±20	V
ID	Drain Current Continuous (TC = 25, VGS = 10V)	67	A
	Continuous (TC = 25, VGS = 5V)	60	A
	Continuous (TA = 25, VGS = 5V, RJA = 43/W)	10	A
	Pulsed	Figure 4	A
EAS	Single Pulse Avalanche Energy (Note 1)	46	mJ
PD	Power dissipation	125	W
	Derate above 25	0.83	W/
TJ , TSTG	Operating and Storage Temperature	-55 to 175

Parameters:

Technical/Catalog Information	FDB14AN06LA0
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	67A
Rds On (Max) @ Id, Vgs	11.6 mOhm @ 67A, 10V
Input Capacitance (Ciss) @ Vds	2900pF @ 25V
Power - Max	125W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	31nC @ 5V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDB14AN06LA0 FDB14AN06LA0