FDB10AN06A0

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 75 A
Package / Case : TO-263AB
Resistance Drain-Source RDS (on) : 0.0095 Ohms at 10 V


Features:

*r_DS(ON) = 9.5m (Typ.), V_GS= 10V, I_D = 75A 
*Q_g (tot) = 28nC (Typ.), V_GS = 10V 
* Low Miller Charge
* Low Qrr Body Diode
* UIS Capability (Single Pulse and Repetitive Pulse)
* Qualified to AEC Q101
Formerly developmental type 82560


Application

* Motor / Body Load Control
* ABS Systems
* Powertrain Management
* Injection Systems
* DC-DC converters and Off-line UPS
* Distributed Power Architectures and VRMs
* Primary Switch for 12V and 24V systems


Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain to Source Voltage	60	V
VGS	Gate to Source Voltage	±20	V
ID	Drain Current Continuous (TC = 25, VGS = 10V)	75	A
	Continuous (TC = 100, VGS = 5V)	54	A
	Continuous (Tamb  = 25, VGS = 10V) with RJA= 43/W)	12	A
	Pulsed	Figure 4	A
EAS	Single Pulse Avalanche Energy (Note 1)	429	mJ
PD	Power dissipation	135	W
	Derate above 25	0.9	W/
TJ ,TSTG	Operating and Storage Temperature	-55 to 175

Parameters:

Technical/Catalog Information	FDB10AN06A0
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	75A
Rds On (Max) @ Id, Vgs	10.5 mOhm @ 75A, 10V
Input Capacitance (Ciss) @ Vds	1840pF @ 25V
Power - Max	135W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	37nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDB10AN06A0 FDB10AN06A0