FDB12N50FTM_WS

MOSFET 500V 11.5A 0.7Ohm N-Channel

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SeekIC No. : 00146924 Detail

FDB12N50FTM_WS: MOSFET 500V 11.5A 0.7Ohm N-Channel

floor Price/Ceiling Price

US $ .57~.94 / Piece | Get Latest Price
Part Number:
FDB12N50FTM_WS
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.94
  • $.73
  • $.65
  • $.57
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/10/30

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 11.5 A
Resistance Drain-Source RDS (on) : 0.59 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : D2PAK Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : D2PAK
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 500 V
Continuous Drain Current : 11.5 A
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 0.59 Ohms


Parameters:

Technical/Catalog InformationFDB12N50FTM_WS
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C11.5A
Rds On (Max) @ Id, Vgs700 mOhm @ 6A, 10V
Input Capacitance (Ciss) @ Vds 1395pF @ 25V
Power - Max165W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs30nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDB12N50FTM_WS
FDB12N50FTM_WS
FDB12N50FTM_WSTR ND
FDB12N50FTM_WSTRND
FDB12N50FTM_WSTR



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