Position: Home  > All Categories> Integrated Circuits (ICs) > FDB13AN06A0

FDB13AN06A0

MOSFET N-Channel PowerTrench

product image

FDB13AN06A0 Picture
See larger image
SeekIC No. : 00148099 Detail

FDB13AN06A0: MOSFET N-Channel PowerTrench

FDB13AN06A0 Data Sheet

floor Price/Ceiling Price

US $ .7~.98 / Piece | Get Latest Price
Part Number:
FDB13AN06A0
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.98
  • $.88
  • $.79
  • $.7
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/1/9

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 62 A
Resistance Drain-Source RDS (on) : 0.0115 Ohms at 10 V Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : TO-263
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 62 A
Resistance Drain-Source RDS (on) : 0.0115 Ohms at 10 V


Features:

*rDS(ON)  = 11.5m (Typ.), VGS = 10V, ID = 62A 
*Qg (tot) = 22nC (Typ.), VGS = 10V 
* Low Miller Charge
*Low QRR  Body Diode
* UIS Capability (Single Pulse and Repetitive Pulse)
* Qualified to AEC Q101
Formerly developmental type 82555


Application

* Motor / Body Load Control
* ABS Systems
* Powertrain Management
* Injection Systems
* DC-DC converters and Off-line UPS
* Distributed Power Architectures and VRMs
* Primary Switch for 12V and 24V systems


Specifications

Symbol Parameter Ratings Units
VDSS

 Drain to Source Voltage 60 V
VGS
Gate to Source Voltage
±20
 V
ID
 Drain Current
Continuous (TC  = 25, VGS = 10V) 		 62 A
Continuous (TC  = 100, VGS  = 10V) 44 A
Continuous (TA  = 25, VGS = 10V, RJA = 43/W)  10.9 A
Pulsed Figure 4 A
EAS
 Single Pulse Avalanche Energy (Note 1) 56 mJ
PD Power dissipation 115 W
Derate above 25 0.77 W/
TJ , TSTG Operating and Storage Temperature -55 to 175  



Parameters:

Technical/Catalog InformationFDB13AN06A0
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C62A
Rds On (Max) @ Id, Vgs13.5 mOhm @ 62A, 10V
Input Capacitance (Ciss) @ Vds 1350pF @ 25V
Power - Max115W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs29nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDB13AN06A0
FDB13AN06A0
FDB13AN06A0DKR ND
FDB13AN06A0DKRND
FDB13AN06A0DKR



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Cables, Wires - Management
NM-SF50+
CCK26.5-MM-190-30
Memory Cards, Modules
WT32
VTL5C7
LED Products
LM24P20
KCG057QV1DB-G770
Audio Products
HUC1002
WM-64CT
Line Protection, Backups
BX0023
A20B-1008-0550
Power Supplies - Board Mount
HC-06
PM150RSA060-S81AH0G
View more