Position: Home  > All Categories> Integrated Circuits (ICs) > FDB12N50UTM_WS

FDB12N50UTM_WS

MOSFET 500V 10A 0.8Ohm N-Channel

product image

FDB12N50UTM_WS Picture
See larger image
SeekIC No. : 00153391 Detail

FDB12N50UTM_WS: MOSFET 500V 10A 0.8Ohm N-Channel

FDB12N50UTM_WS Data Sheet

floor Price/Ceiling Price

US $ .62~1.09 / Piece | Get Latest Price
Part Number:
FDB12N50UTM_WS
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~50
  • 50~100
  • 100~400
  • 400~800
  • Unit Price
  • $1.09
  • $.88
  • $.79
  • $.71
  • $.62
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/3/13

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 10 A
Resistance Drain-Source RDS (on) : 0.55 Ohms at 10 V Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : D2PAK Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : D2PAK
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 10 A
Resistance Drain-Source RDS (on) : 0.55 Ohms at 10 V


Parameters:

Technical/Catalog InformationFDB12N50UTM_WS
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C10A
Rds On (Max) @ Id, Vgs800 mOhm @ 5A, 10V
Input Capacitance (Ciss) @ Vds 1395pF @ 25V
Power - Max165W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs30nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDB12N50UTM_WS
FDB12N50UTM_WS
FDB12N50UTM_WSTR ND
FDB12N50UTM_WSTRND
FDB12N50UTM_WSTR



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Circuit Protection
A50QS75-4Y
F-17*77
Static Control, ESD, Clean Room Products
DPA5
PA800-A41
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
Motors, Solenoids, Driver Boards/Modules
IHSS57-36-20
ASD-B2-1521-B
Cable Assemblies
CS1W-CN114
XW2Z-500T
Optoelectronics
SFH7770
TLP423J
View more