MOSFET 500V N-CH MOSFET
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 500 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 11.5 A | ||
Resistance Drain-Source RDS (on) : | 0.55 Ohms at 10 V | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | D2PAK | Packaging : | Reel |
Technical/Catalog Information | FDB12N50TM |
Vendor | Fairchild Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25° C | 11.5A |
Rds On (Max) @ Id, Vgs | 650 mOhm @ 6A, 10V |
Input Capacitance (Ciss) @ Vds | 1315pF @ 25V |
Power - Max | 165W |
Packaging | Digi-Reel? |
Gate Charge (Qg) @ Vgs | 30nC @ 10V |
Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDB12N50TM FDB12N50TM FDB12N50TMDKR ND FDB12N50TMDKRND FDB12N50TMDKR |