Transistor Polarity
: N-Channel
Configuration
: Single
Mounting Style
: Through Hole
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Package / Case
: TO-220AB
Gate-Source Breakdown Voltage
: +/- 30 V
Drain-Source Breakdown Voltage
: 600 V
Continuous Drain Current
: 11 A
Resistance Drain-Source RDS (on)
: 0.38 Ohms
Features: • 650V @TJ = 150°C
• Typ. RDS(on) = 0.32Ω
• Fast Recovery Type ( trr = 120ns)
• Ultra Low Gate Charge (typ. Qg = 40nC)
• Low Effective Output Capacitance (typ. Cosseff.=95pF)
• 100% avalanche testedSpecifications
|
Symbol |
Parameter |
FCP11N60F |
FCPF11N60F |
Units |
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL |
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds |
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
|
11
7
33
± 30 |
11 *
7 *
33 *
|
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
|
|
340
11
12.5
4.5 |
|
125
1.0 |
36 *
0.29 * |
|
-55 to +150
300 |
DescriptionFCP11N60F SuperFETTM is, Farichild's proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.
This FCP11N60F advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
Parameters: | Technical/Catalog Information | FCP11N60F |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 11A |
| Rds On (Max) @ Id, Vgs | 380 mOhm @ 5.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 1490pF @ 25V |
| Power - Max | 125W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 52nC @ 10V |
| Package / Case | TO-220 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FCP11N60F
FCP11N60F
|
FCP11N60F Data Sheet
