Transistor Polarity
: N-Channel
Configuration
: Single
Mounting Style
: Through Hole
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Package / Case
: TO-220AB
Gate-Source Breakdown Voltage
: +/- 30 V
Drain-Source Breakdown Voltage
: 600 V
Continuous Drain Current
: 11 A
Resistance Drain-Source RDS (on)
: 0.38 Ohms
Features: • 650V @Tj = 150°C
• Typ. Rds(on)=0.32Ω
• Ultra low gate charge (typ. Qg=40nC)
• Low effective output capacitance (typ. Coss.eff=95pF)
• 100% avalanche testedSpecifications
|
Symbol |
Parameter |
FCP11N60F |
FCPF11N60F |
Units |
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL |
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds |
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
|
11
7
33
|
11 *
7 *
33 *
|
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
|
|
± 30
340
11
12.5
4.5 |
|
125
1.0 |
36
0.29 |
|
-55 to +150
300 |
DescriptionSuperFETTM is a new generation of high voltage MOSFETs from Fairchild with outstanding low on-resistance and low gate charge performance, a result of proprietary technology utilizing advanced charge balance mechanisms. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
Parameters: | Technical/Catalog Information | FCP11N60 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 11A |
| Rds On (Max) @ Id, Vgs | 380 mOhm @ 5.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 1490pF @ 25V |
| Power - Max | 125W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 52nC @ 10V |
| Package / Case | TO-220 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FCP11N60
FCP11N60
|
FCP11N60 Data Sheet
