F2213 Selling Leads, Price trend, F2213 DataSheet download, circuit diagram from SeekIC.com

PinoutSpecifications TotalDeviceDissipation Junction to Case ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gate toSourceVoltage 80Watts 2.1/W 200 -65 to 150 6.4A 50 V 50 V 30VDescriptionSilicon VDM...

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SeekIC No. : 004339972 Detail

F2213: PinoutSpecifications TotalDeviceDissipation Junction to Case ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gat...

F2213 Data Sheet

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Part Number:: F2213
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/12/25

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PinoutSpecifications TotalDeviceDissipation Junction to Case ThermalResistance MaximumJunct...
F2211/16 CL005 evaluate
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Product Details

Description

Pinout

Connection Diagram

Specifications

Total Device Dissipation	Junction to Case Thermal Resistance	Maximum Junction Temperature	Storage Temperature	DC Drain Current	Drain to Gate Voltage	Drain to Source Voltage	Gate to Source Voltage
80Watts	2.1/W	200	-65 to 150	6.4A	50 V	50 V	30V

Description

Silicon VDMOS and LDMOS transistors F2213 designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

"Polyfet" ^TM process F2213 features gold metal for greatly extended lifetime. Low output capacitance and high F_tenhance broadband performance

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F2213

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