PinoutSpecifications TotalDeviceDissipation Junction to Case ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gate toSourceVoltage 30Watts 6/W 200 -65 to 150 3.2A 50 V 50 V 30VDescriptionSilicon VDMOS...
F2211: PinoutSpecifications TotalDeviceDissipation Junction to Case ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gat...
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Total Device Dissipation |
Junction to Case Thermal Resistance |
Maximum Junction Temperature |
Storage Temperature |
DC Drain Current |
Drain to Gate Voltage |
Drain to Source Voltage |
Gate to Source Voltage |
30Watts | 6/W | 200 | -65 to 150 |
3.2A | 50 V | 50 V | 30V |
Silicon VDMOS and LDMOS transistors F2211 designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet" TM process F2211 features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance