Pinout
DescriptionThe features of EPCS4SI8N are: (1)Complementary to 2SC1623; (2)High DC Current Gain: hFE = 200 TYP. (VCE = -6.0 V, IC = -1.0 mA) ); (3)High Voltage: VCEO = -50 V.
The following is about the absolute maximum ratings of EPCS4SI8N: (1)Collector to Base Voltage: -60 V; (2)Collector to Emitter Voltage: -50 V; (3)Emitter to Base Voltage: -5.0 V; (4)Collector Current (DC) IC: -100 mA; (5)Total Power Dissipation: 200 mW; (6)Junction Temperature: 150 °C; (7)Storage Temperature Range: -55 to +150 °C.
The electrical characteristics of the EPCS4SI8N are: (1)Collector Cutoff Current ICBO: -0.1 A at VCB = -60 V, IE = 0 A; (2)Emitter Cutoff Current IEBO: -0.1 A VEB = -5.0 V, IC = 0 A; (3)DC Current Gain hFE: 90min, 200 typ and 600 max at VCE = -6.0 V, IC = -1.0 mA; (4)Collector Saturation Voltage: -0.1 V typ and -0.3 V max at IC = -100 mA, IB = -10 mA; (5)Base to Emitter Voltage: -0.58V min, -0.62V typ and -0.68 V max at VCE = 6.0 V, IC = -1.0 mA; (6)Gain Bandwidth Product: 180 MHz at VCE = -6.0 V, IE = 10 mA; (7)Output Capacitance: 4.5 pF VCE = -10 V, IE = 0 A, f = 1.0 MHz.
Parameters: | Technical/Catalog Information | EPCS4SI8N |
| Vendor | Altera |
| Category | Integrated Circuits (ICs) |
| Programmable Type | In System Programmable |
| Memory Size | 4Mb |
| Package / Case | 8-SOIC (3.9mm Width) |
| Packaging | Tube |
| Voltage - Supply | 3 V ~ 3.6 V |
| Operating Temperature | -40°C ~ 85°C |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | EPCS4SI8N
EPCS4SI8N
544 1379 5 ND
54413795ND
544-1379-5
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EPCS4SI8N Data Sheet
