EPCS16SI16N

Serial configuration devices EPCS16SI16N are flash memory devices with a serial interface that can store configuration data for a Stratix II FPGA or a Cyclone series device and reload the data to the device upon power-up or reconfiguration. With SRAM-based devices such as Stratix II FPGAs and the Cyclone series fpgas, configuration data must be reloaded each time the device powers up, the system initializes, or when new configuration data is needed.

The features of EPCS16SI16N can be summarized as (1)1-, 4-, 16-, and 64-Mbit flash memory devices that serially configure Stratix II FPGAs and the Cyclone series FPGAs using the active serial (AS) configuration scheme; (2)easy-to-use four-pin interface; (3)low cost, low pin count and non-volatile memory; (4)low current during configuration and near-zero standby mode current; (5)3.3-V operation; (6)Available in 8-pin and 16-pin small outline integrated circuit (SOIC) package; (7)enables the Nios processor to access unused flash memory through AS memory interface; (8)re-programmable memory with more than 100,000 erase/program cycles; (9)write protection support for memory sectors using status register bits; (10)in-system programming support with SRunner software driver; (11)programming support with USB Blaster or ByteBlaster II download cables; (12)additional programming support with the Altera Programming Unit (APU) and programming hardware from BP Microsystems, System General, and other vendors; (13)software design support with the Altera Quartus II development system for windows-based PCs as well as Sun SPARC station and HP 9000 Series 700/800; (14)delivered with the memory array erased (all the bits set to 1 ).

The absolute maximum ratings of EPCS16SI16N are (1)V CC supply voltage with respect to ground: -0.6 to 4.0 V; (2)V I DC input voltage with respect to ground: -0.6 to 4.0 V; (3)IMAX DC VCC or GND current: 15mA; (4)IOUT DC output current per pin: 25 to 25mA; (5)PD power dissipation: 54mW; (6)TSTG storage temperature no bias: -65 to 150° C; (7)TAMB ambient temperature under bias: -65 to 135° C; (8)T J Junction temperature Under bias 135 ° C.