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EPC1007

TRANS GAN 100V 6A BUMPED DIE

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SeekIC No. : 003433714 Detail

EPC1007: TRANS GAN 100V 6A BUMPED DIE

EPC1007 Data Sheet

floor Price/Ceiling Price

US $ 1.03~1.89 / Piece | Get Latest Price
Part Number:
EPC1007
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • 250~500
  • Unit Price
  • $1.89
  • $1.62
  • $1.32
  • $1.19
  • $1.03
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

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Upload time: 2024/11/22

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Product Details

Quick Details

Series: eGaN® Manufacturer: EPC
FET Type: GaNFET N-Channel, Gallium Nitride Gain : 15.5 dB
Transistor Type: - Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 6A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 5V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2.5V @ 1.2mA Gate Charge (Qg) @ Vgs: 2.7nC @ 5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 200pF @ 50V
Power - Max: - Mounting Type: Surface Mount
Package / Case: 5-LGA Supplier Device Package: 5-LGA (1.7x1.1)    

Description

Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
Current - Continuous Drain (Id) @ 25° C: 6A
Drain to Source Voltage (Vdss): 100V
Power - Max: -
Series: eGaN®
Manufacturer: EPC
FET Type: GaNFET N-Channel, Gallium Nitride
Package / Case: 5-LGA
Supplier Device Package: 5-LGA (1.7x1.1)
Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1.2mA
Gate Charge (Qg) @ Vgs: 2.7nC @ 5V
Input Capacitance (Ciss) @ Vds: 200pF @ 50V


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