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EPC1001

TRANS GAN 100V 25A BUMPED DIE

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SeekIC No. : 003432560 Detail

EPC1001: TRANS GAN 100V 25A BUMPED DIE

EPC1001 Data Sheet

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Part Number:
EPC1001
Mfg:
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Series: eGaN® Manufacturer: EPC
FET Type: GaNFET N-Channel, Gallium Nitride Gain : 11.5 dB at 500 MHz
Transistor Type: - Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 25A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 5V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2.5V @ 5mA Gate Charge (Qg) @ Vgs: 10.5nC @ 5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 800pF @ 50V
Power - Max: - Mounting Type: Surface Mount
Package / Case: Die Outline (11-Solder Bar) Supplier Device Package: Die Outline (11-Solder Bar)    

Description

Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 100V
Power - Max: -
Current - Continuous Drain (Id) @ 25° C: 25A
Packaging: Cut Tape (CT)
Gate Charge (Qg) @ Vgs: 10.5nC @ 5V
Series: eGaN®
Manufacturer: EPC
FET Type: GaNFET N-Channel, Gallium Nitride
Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Package / Case: Die Outline (11-Solder Bar)
Supplier Device Package: Die Outline (11-Solder Bar)
Input Capacitance (Ciss) @ Vds: 800pF @ 50V


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