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EPC1005: TRANS GAN 60V 25A BUMPED DIE

EPC1005 Data Sheet

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Part Number:: EPC1005
Mfg:
Supply Ability:: 5000

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1~5000

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Upload time: 2024/7/15

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TRANS GAN 100V 25A BUMPED DIE

Product Details

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Series:	eGaN®	Manufacturer:	EPC
FET Type:	GaNFET N-Channel, Gallium Nitride	Gain :	11.5 dB at 500 MHz
Transistor Type:	-	Current - Collector (Ic) (Max):	-
FET Feature:	Logic Level Gate	Drain to Source Voltage (Vdss):	60V
Voltage - Collector Emitter Breakdown (Max):	-	Current - Continuous Drain (Id) @ 25° C:	25A
Vce Saturation (Max) @ Ib, Ic:	-	Current - Collector Cutoff (Max):	-
Rds On (Max) @ Id, Vgs:	7 mOhm @ 25A, 5V	DC Current Gain (hFE) (Min) @ Ic, Vce:	-
Vgs(th) (Max) @ Id:	2.5V @ 5mA	Gate Charge (Qg) @ Vgs:	10nC @ 5V
Frequency - Transition:	-	Input Capacitance (Ciss) @ Vds:	790pF @ 30V
Power - Max:	-	Mounting Type:	Surface Mount
Package / Case:	11-LGA	Supplier Device Package:	11-LGA (4.1x1.6)

Description

Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 60V
Power - Max: -
Current - Continuous Drain (Id) @ 25° C: 25A
Packaging: Cut Tape (CT)
Series: eGaN®
Manufacturer: EPC
FET Type: GaNFET N-Channel, Gallium Nitride
Gate Charge (Qg) @ Vgs: 10nC @ 5V
Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Input Capacitance (Ciss) @ Vds: 790pF @ 30V
Package / Case: 11-LGA
Supplier Device Package: 11-LGA (4.1x1.6)

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EPC1005

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