Position: Home  > All Categories> Integrated Circuits (ICs) > EPC1005

EPC1005

TRANS GAN 60V 25A BUMPED DIE

product image

EPC1005 Picture
See larger image
SeekIC No. : 003432561 Detail

EPC1005: TRANS GAN 60V 25A BUMPED DIE

EPC1005 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
EPC1005
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/18

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Series: eGaN® Manufacturer: EPC
FET Type: GaNFET N-Channel, Gallium Nitride Gain : 11.5 dB at 500 MHz
Transistor Type: - Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 25A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 5V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2.5V @ 5mA Gate Charge (Qg) @ Vgs: 10nC @ 5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 790pF @ 30V
Power - Max: - Mounting Type: Surface Mount
Package / Case: 11-LGA Supplier Device Package: 11-LGA (4.1x1.6)    

Description

Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 60V
Power - Max: -
Current - Continuous Drain (Id) @ 25° C: 25A
Packaging: Cut Tape (CT)
Series: eGaN®
Manufacturer: EPC
FET Type: GaNFET N-Channel, Gallium Nitride
Gate Charge (Qg) @ Vgs: 10nC @ 5V
Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Input Capacitance (Ciss) @ Vds: 790pF @ 30V
Package / Case: 11-LGA
Supplier Device Package: 11-LGA (4.1x1.6)


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Kits
IT243
UVSC-110-4E1
Sensors, Transducers
GP2Y0D340K
PAN3509DH-TXWA
Power Supplies - External/Internal (Off-Board)
A76L-0300-0077
A5E01231722-F2
LED Products
LM24P20
KCG057QV1DB-G770
Potentiometers, Variable Resistors
RV24YN
WXD4-23-3W
Prototyping Products
AVT4168
DE1
View more