EPA018BV

Features: ` VERY HIGH fmax: 120GHz` +20.0dBm TYPICAL OUTPUT POWER` 13.0dB TYPICAL POWER GAIN AT 18 GHz` TYPICAL 0.75dB NOISE FIGURE AND 12.5dB ASSOCIATED GAIN AT 12GHz` 0.3 X 180 MICRON RECESSED MUSHROOM GATE` Si3N4 PASSIVATION AND VIA HOLE GROUNDING` ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PR...

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EPA018BV Picture
SeekIC No. : 004337187 Detail

EPA018BV: Features: ` VERY HIGH fmax: 120GHz` +20.0dBm TYPICAL OUTPUT POWER` 13.0dB TYPICAL POWER GAIN AT 18 GHz` TYPICAL 0.75dB NOISE FIGURE AND 12.5dB ASSOCIATED GAIN AT 12GHz` 0.3 X 180 MICRON RECESSED MU...

floor Price/Ceiling Price

Part Number:
EPA018BV
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/6/11

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Product Details

Description



Features:

`  VERY HIGH fmax: 120GHz
`  +20.0dBm TYPICAL OUTPUT POWER
`  13.0dB TYPICAL POWER GAIN AT 18 GHz
`  TYPICAL 0.75dB NOISE FIGURE AND 12.5dB ASSOCIATED GAIN AT 12GHz
`  0.3 X 180 MICRON RECESSED "MUSHROOM" GATE
`  Si3N4 PASSIVATION AND VIA HOLE GROUNDING
`  ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY
`  Idss SORTED IN 5 mA PER BIN RANGE



Specifications

SYMBOLS
PARAMETERS
ABSOLUTE1
CONTINUOUS2
Vds
Drain-Source Voltage
12V
6V
Vgs
Gate-Source Voltage
-8V
-3V
Ids
Drain Current
Idss
Idss
Igsf
Forward Gate Current
9mA
1.5mA
Pin
Input Power

16dBm

@ 3dB Compression
Tch
Channel Temperature
175
150
Tstg
Storage Temperature
-65/175
-65/150
Pt
Total Power Dissipation
950mW
800mW



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