EPA018BV Selling Leads, Price trend, EPA018BV DataSheet download, circuit diagram from SeekIC.com

Features: ` VERY HIGH fmax: 120GHz` +20.0dBm TYPICAL OUTPUT POWER` 13.0dB TYPICAL POWER GAIN AT 18 GHz` TYPICAL 0.75dB NOISE FIGURE AND 12.5dB ASSOCIATED GAIN AT 12GHz` 0.3 X 180 MICRON RECESSED MUSHROOM GATE` Si3N4 PASSIVATION AND VIA HOLE GROUNDING` ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PR...

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SeekIC No. : 004337187 Detail

EPA018BV: Features: ` VERY HIGH fmax: 120GHz` +20.0dBm TYPICAL OUTPUT POWER` 13.0dB TYPICAL POWER GAIN AT 18 GHz` TYPICAL 0.75dB NOISE FIGURE AND 12.5dB ASSOCIATED GAIN AT 12GHz` 0.3 X 180 MICRON RECESSED MU...

EPA018BV Data Sheet

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Part Number:: EPA018BV
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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268 Transactions

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Upload time: 2024/12/30

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Recent History
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Product Details

Description

Features:

` VERY HIGH fmax: 120GHz
` +20.0dBm TYPICAL OUTPUT POWER
` 13.0dB TYPICAL POWER GAIN AT 18 GHz
` TYPICAL 0.75dB NOISE FIGURE AND 12.5dB ASSOCIATED GAIN AT 12GHz
` 0.3 X 180 MICRON RECESSED "MUSHROOM" GATE
` Si3N4 PASSIVATION AND VIA HOLE GROUNDING
` ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY
` Idss SORTED IN 5 mA PER BIN RANGE

Specifications

SYMBOLS	PARAMETERS	ABSOLUTE1	CONTINUOUS2
Vds	Drain-Source Voltage	12V	6V
Vgs	Gate-Source Voltage	-8V	-3V
Ids	Drain Current	Idss	Idss
Igsf	Forward Gate Current	9mA	1.5mA
Pin	Input Power	16dBm	@ 3dB Compression
Tch	Channel Temperature	175	150
Tstg	Storage Temperature	-65/175	-65/150
Pt	Total Power Dissipation	950mW	800mW

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EPA018BV

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