Features: ` +23.0dBm TYPICAL OUTPUT POWER` 11.0dB TYPICAL POWER GAIN AT 18GHz` 0.3 X 300 MICRON RECESSED MUSHROOM GATE` Si3N4 PASSIVATION` ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY` Idss SORTED IN 10mA PER BIN RANGESpecifications ...
EPA030C: Features: ` +23.0dBm TYPICAL OUTPUT POWER` 11.0dB TYPICAL POWER GAIN AT 18GHz` 0.3 X 300 MICRON RECESSED MUSHROOM GATE` Si3N4 PASSIVATION` ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA ...
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SYMBOLS |
PARAMETERS |
ABSOLUTE1 |
CONTINUOUS2 |
Vds |
Drain-Source Voltage | 12V |
8V |
Vgs |
Gate-Source Voltage | -8V |
-3V |
Ids |
Drain Current | Idss |
110mA |
Igsf |
Forward Gate Current | 15mA |
2.5mA |
Pin |
Input Power | 21dBm |
@ 3dB Compression |
Tch |
Channel Temperature | 175 |
150 |
Tstg |
Storage Temperature | -65/175 |
-65/150 |
Pt |
Total Power Dissipation | 1.1W |
900mW |