Features: • Single power supply operation- Full voltage range: 2.7-3.6 volt• 4 Mbit Serial Flash- 4 M-bit/512 K-byte/2048 pages- 256 bytes per programmable page• High performance- 100MHz clock rate• Low power consumption- 5 mA typical active current- 1 A typical power down ...
EN25F40: Features: • Single power supply operation- Full voltage range: 2.7-3.6 volt• 4 Mbit Serial Flash- 4 M-bit/512 K-byte/2048 pages- 256 bytes per programmable page• High performance- ...
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Parameter | Value | Unit |
Storage Temperature | -65 to +125 | °C |
Plastic Packages | -65 to +125 | °C |
Output Short Circuit Current1 | 200 | mA |
Input and Output Voltage (with respect to ground) 2 | -0.5 to +4.0 | V |
Vcc | -0.5 to +4.0 | V |
Notes:
1. No more than one output shorted at a time. Duration of the short circuit should not be greater than one second.
2. Minimum DC voltage on input or I/O pins is 0.5 V. During voltage transitions, inputs may undershoot Vss to 1.0V for periods of up to 50ns and to 2.0 V for periods of up to 20ns. See figure below. Maximum DC voltage on output and I/O pins is Vcc + 0.5 V. During voltage transitions, outputs may overshoot to Vcc + 1.5 V for periods up to 20ns. See figure below.
The EN25F40 is a 4M-bit (512K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25F40 is designed to allow either single Sector at a time or full chip erase operation.
The EN25F40 can be configured to protect part of the memory as the software protected mode. The device can sustain a minimum of 100K program/erase cycles on each sector.