EN25F10

The EN25F10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction.The EN25F10 is designed to allow either single Sector at a time or full chip erase operation. The EN25F10 can be configured to protect part of the memory as the software protected mode. The device can sustain a minimum of 100K program/erase cycles on each sector.

Features of the EN25F10 are:(1)lockable 256 byte OTP security sector; (2)minimum 100K endurance cycle; (3)industrial temperature range; (4)write protect all or portion of memory via software; (5)enable/disable protection with WP# pin.The SPI Serial Data Input (DI) pin provides a means for instructions, addresses and data to be serially written to (shifted into) the device. Data is latched on the rising edge of the Serial Clock (CLK) input pin.

The absolute maximum ratings of the EN25F10 can be summarized as:(1)storage temperature:-65 to 125;(2)plastic packages:-65 to 125;(3)output short circuit current:200mA;(4)input and output voltage:-0.5 to 4.0 V;(5)Vcc:-0.5 to 4.0V.Stresses above the values so mentioned above may cause permanent damage to the device. These values are for a stress rating only and do not imply that the device should be operated at conditions up to or above these values. Exposure of the device to the maximum rating values for extended periods of time may adversely affect the device reliability.The instruction sequence is shown in Figure 9. The first byte addressed can be at any location. The address is automatically incremented to the next higher address after each byte of data is shifted out.The whole memory can, therefore, be read with a single Read Data Bytes (READ) instruction. When the highest address is reached, the address counter rolls over to 000000h, allowing the read sequence to be continued indefinitely.