EN25B80

Notes:
1. No more than one output shorted at a time. Duration of the short circuit should not be greater than one second.
2. Minimum DC voltage on input or I/O pins is 0.5 V. During voltage transitions, inputs may undershoot Vss to 1.0V for periods of up to 50ns and to 2.0 V for periods of up to 20ns. See figure below. Maximum DC voltage on output and I/O pins is Vcc + 0.5 V. During voltage transitions, outputs may overshoot to Vcc + 1.5 V for periods up to 20ns. See figure below.

The EN25B80 is a 8M-bit (1024K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25B80 has twenty sectors including fifteen sectors of 64KB, one sector of 32KB, one sector of 16KB, one sector of 8KB and two sectors of 4KB. This device is designed to allow either single Sector at a time or full chip erase operation.

The EN25B80 can protect boot code stored in the small sectors for either bottom or top boot configurations. The device can sustain a minimum of 100K program/erase cycles on each sector.