EMZ1DXV6T5G, US $ .04-.04 , ON Semiconductor, EMZ1DXV6T5G DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00207530 Detail

EMZ1DXV6T5G: Transistors Bipolar (BJT) 100mA 50V Dual Complementary

EMZ1DXV6T5G Data Sheet

US $ .04~.04 / Piece | Get Latest Price

Part Number:: EMZ1DXV6T5G
Mfg:: ON Semiconductor
Supply Ability:: 5000

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Upload time: 2024/12/26

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EMZ1DXV6T1 evaluate
Transistors Bipolar (BJT) 100mA 50V Dual
EMZ1DXV6T1G evaluate
Transistors Bipolar (BJT) 100mA 50V Dual Complementary
EMZ1DXV6T5 evaluate
Transistors Bipolar (BJT) 100mA 50V Dual

Product Details

Quick Details

Transistor Polarity :	NPN, PNP	Collector- Emitter Voltage VCEO Max :	60 V
Emitter- Base Voltage VEBO :	6 V	Maximum DC Collector Current :	0.1 A
DC Collector/Base Gain hfe Min :	120 at 1 mA at 6 V	Configuration :	Dual
Maximum Operating Frequency :	140 MHz	Maximum Operating Temperature :	+ 150 C
Mounting Style :	SMD/SMT	Package / Case :	SOT-563
Packaging :	Reel

Description

Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Emitter- Base Voltage VEBO : 6 V
Collector- Emitter Voltage VCEO Max : 60 V
Configuration : Dual
Maximum DC Collector Current : 0.1 A
Transistor Polarity : NPN, PNP
Package / Case : SOT-563
Maximum Operating Frequency : 140 MHz
DC Collector/Base Gain hfe Min : 120 at 1 mA at 6 V

Parameters:

Technical/Catalog Information	EMZ1DXV6T5G
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN + PNP (Dual)
Voltage - Collector Emitter Breakdown (Max)	60V
Current - Collector (Ic) (Max)	100mA
Power - Max	500mW
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA, 6V
Vce Saturation (Max) @ Ib, Ic	400mV, 500mV @ 5mA, 50mA
Frequency - Transistion	140MHz, 180MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Surface Mount
Package / Case	SOT-563
Packaging	Tape & Reel (TR)
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	EMZ1DXV6T5G EMZ1DXV6T5G

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