Transistors Bipolar (BJT) 100mA 50V Dual Complementary
EMZ1DXV6T5G: Transistors Bipolar (BJT) 100mA 50V Dual Complementary
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Transistor Polarity : | NPN, PNP | Collector- Emitter Voltage VCEO Max : | 60 V |
Emitter- Base Voltage VEBO : | 6 V | Maximum DC Collector Current : | 0.1 A |
DC Collector/Base Gain hfe Min : | 120 at 1 mA at 6 V | Configuration : | Dual |
Maximum Operating Frequency : | 140 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | SMD/SMT | Package / Case : | SOT-563 |
Packaging : | Reel |
Technical/Catalog Information | EMZ1DXV6T5G |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | NPN + PNP (Dual) |
Voltage - Collector Emitter Breakdown (Max) | 60V |
Current - Collector (Ic) (Max) | 100mA |
Power - Max | 500mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 6V |
Vce Saturation (Max) @ Ib, Ic | 400mV, 500mV @ 5mA, 50mA |
Frequency - Transistion | 140MHz, 180MHz |
Current - Collector Cutoff (Max) | - |
Mounting Type | Surface Mount |
Package / Case | SOT-563 |
Packaging | Tape & Reel (TR) |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | EMZ1DXV6T5G EMZ1DXV6T5G |