EMZ1DXV6T1

Transistors Bipolar (BJT) 100mA 50V Dual

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EMZ1DXV6T1 Picture
SeekIC No. : 00214831 Detail

EMZ1DXV6T1: Transistors Bipolar (BJT) 100mA 50V Dual

floor Price/Ceiling Price

Part Number:
EMZ1DXV6T1
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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evaluate  (4.8 stars)

Upload time: 2024/12/26

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Product Details

Quick Details

Transistor Polarity : NPN, PNP Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 6 V Maximum DC Collector Current : 0.1 A
DC Collector/Base Gain hfe Min : 120 at 1 mA at 6 V Configuration : Dual
Maximum Operating Frequency : 140 MHz Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : SOT-563
Packaging : Reel    

Description

Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Emitter- Base Voltage VEBO : 6 V
Collector- Emitter Voltage VCEO Max : 60 V
Configuration : Dual
Maximum DC Collector Current : 0.1 A
Transistor Polarity : NPN, PNP
Package / Case : SOT-563
Maximum Operating Frequency : 140 MHz
DC Collector/Base Gain hfe Min : 120 at 1 mA at 6 V


Features:

• Lead−Free Solder Plating
• Low VCE(SAT), <0.5 V



Specifications

Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCBO
-60
V
Collector−Base Voltage
VCEO
-50
V
Emitter−Base Voltage
VEBO
-6.0
V
Collector Current − Continuous
IC
-100
mAdc



Description

This transistor EMZ1DXV6T1 is designed for general purpose amplifier applications. It is housed in the SOT−563 which is designed for low power surface mount applications.


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