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EFA080A-100F

Features: ` HERMETIC 100mil CERAMIC FLANGE PACKAGE` +26.0dBm TYPICAL OUTPUT POWER` 7.5dB TYPICAL POWER GAIN AT 12GHz` 0.3 X 800 MICRON RECESSED MUSHROOM GATE` Si3N4 PASSIVATION` ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITYSpecifications SYMBO...

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EFA080A-100F: Features: ` HERMETIC 100mil CERAMIC FLANGE PACKAGE` +26.0dBm TYPICAL OUTPUT POWER` 7.5dB TYPICAL POWER GAIN AT 12GHz` 0.3 X 800 MICRON RECESSED MUSHROOM GATE` Si3N4 PASSIVATION` ADVANCED EPITAXIAL...

EFA080A-100F Data Sheet

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Part Number:
EFA080A-100F
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

`  HERMETIC 100mil CERAMIC FLANGE PACKAGE
`  +26.0dBm TYPICAL OUTPUT POWER
`  7.5dB TYPICAL POWER GAIN AT 12GHz
`  0.3 X 800 MICRON RECESSED "MUSHROOM" GATE
`  Si3N4 PASSIVATION
`  ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY


Specifications

SYMBOLS
PARAMETERS
ABSOLUTE1
CONTINUOUS2
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
12V
-8V
Idss
20mA
25dBm
175oC
-65/175oC
2.5 W
8V
-4V
250mA
4mA
@ 3dB Compression
150oC
-65/150oC
2.0W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
          2. Exceeding any of the above ratings may reduce MTTF below design goals.


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