EDE5104GBSA

Features: 1.8V power supply Double-data-rate architecture: two data transfers per clock cycle Bi-directional, differential data strobe (DQS and /DQS) is transmitted/received with data, to be used in capturing data at the receiver DQS is edge aligned with data for READs: center-aligned with data fo...

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SeekIC No. : 004333810 Detail

EDE5104GBSA: Features: 1.8V power supply Double-data-rate architecture: two data transfers per clock cycle Bi-directional, differential data strobe (DQS and /DQS) is transmitted/received with data, to be used in...

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Part Number:
EDE5104GBSA
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/7

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Product Details

Description



Features:

1.8V power supply
Double-data-rate architecture: two data transfers per clock cycle
Bi-directional, differential data strobe (DQS and /DQS) is transmitted/received with data, to be used in capturing data at the receiver
DQS is edge aligned with data for READs: center-aligned with data for WRITEs
Differential clock inputs (CK and /CK)
DLL aligns DQ and DQS transitions with CK transitions
Commands entered on each positive CK edge: data and data mask referenced to both edges of DQS 
Four internal banks for concurrent operation
Data mask (DM) for write data
Burst lengths: 4, 8
/CAS Latency (CL): 3, 4, 5
Auto precharge operation for each burst access
Auto refresh and self refresh modes
7.8s average periodic refresh interval
1.8V (SSTL_18 compatible) I/O
Posted CAS by programmable additive latency for better command and data bus efficiency
Off-Chip-Driver Impedance Adjustment and On-Die-Termination for better signal quality
Programmable RDQS, /RDQS output for making * 8  organization compatible to * 4 organization
/DQS, (/RDQS) can be disabled for single-ended Data Strobe operation.
BGA package is lead free solder (Sn-Ag-Cu) 
 



Pinout

  Connection Diagram


Specifications

Parameter Symbol Rating Unit Note
Power supply voltage VDD -0.5 to +2.3 V 1
Power supply voltage for output VDDQ -0.5 to +2.3 V 1
Input voltage VIN -0.5 to +2.3 V 1
Output voltage VOUT -0.5 to +2.3 V 1
Operating temperature (ambient) TA 0 to +70 °C 1
Storage temperature Tstg 55 to +150 °C 1
Power dissipation PD 1.0 W 1
Short circuit output current IOUT 50 mA 1



Description

The EDE5104GB is a 512M bits DDR-II SDRAM organized as 33,554,432 words * 4 bits * 4 banks.   The EDE5108GB is a 512M bits DDR-II SDRAM organized as 16,777,216 words * 8 bits * 4 banks.   It packaged in 64-ball BGA(R)  package.
 
The EDE5116GB is a 512M bits DDR-II SDRAM organized as 8,388,608 words * 16 bits * 4 banks.   It is packaged in 84-ball BGA package.


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