Features: • Power supply: VDD, VDDQ =1.8V ±0.1V • Double-data-rate architecture: two data transfers per clock cycle • Bi-directional, differential data strobe (DQS and /DQS) is transmitted/received with data, to be used in capturing data at the receiver • DQS is edge aligne...
EDE5104AGSE-5C-E: Features: • Power supply: VDD, VDDQ =1.8V ±0.1V • Double-data-rate architecture: two data transfers per clock cycle • Bi-directional, differential data strobe (DQS and /DQS) is tra...
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Features: Power supply: VDD, VDDQ = 1.8V ± 0.1V Double-data-rate architecture: two data transfers ...
Features: • Power supply: VDD, VDDQ =1.8V ±0.1V • Double-data-rate architecture: two d...
Features: • Power supply: VDD, VDDQ =1.8V ±0.1V • Double-data-rate architecture: two d...
• Power supply: VDD, VDDQ = 1.8V ± 0.1V
• Double-data-rate architecture: two data transfers per clock cycle
• Bi-directional, differential data strobe (DQS and /DQS) is transmitted/received with data,
to be used in capturing data at the receiver
• DQS is edge aligned with data for READs: center-aligned with data for WRITEs
• Differential clock inputs (CK and /CK)
• DLL aligns DQ and DQS transitions with CK transitions
• Commands entered on each positive CK edge: data and data mask referenced to both edges of DQS
• Four internal banks for concurrent operation
• Data mask (DM) for write data
• Burst lengths: 4, 8
• /CAS Latency (CL): 3, 4, 5
• Auto precharge operation for each burst access
• Auto refresh and self refresh modes
• Average refresh period 7.8µs at 0°C TC +85°C
3.9µs at +85°C < TC +95°C
• SSTL_18 compatible I/O
• Posted CAS by programmable additive latency for better command and data bus efficiency
• Off-Chip-Driver Impedance Adjustment and On-Die-Termination for better signal quality
• Programmable RDQS, /RDQS output for making * 8 organization compatible to *4 organization
• /DQS, (/RDQS) can be disabled for single-ended Data Strobe operation.
• FBGA (µBGA) package with lead free solder (Sn-Ag-Cu) RoHS compliant
The EDE5104AGSE is a 512M bits DDR2 SDRAM organized as 33,554,432 words × 4 bits × 4 banks. The EDE5108AGSE is a 512M bits DDR2 SDRAM organized as 16,777,216 words × 8 bits × 4 banks. They are packaged in 60-ball FBGA (µBGA® ) package.