EDD5104ADTA

Features: Power supply: VDD, VDDQ = 2.5V ± 0.2V Data Rate: 333Mbps/266Mbps (max.) Double Data Rate architecture; two data transfers per clock cycle Bi-directional, data strobe (DQS) is transmitted /received with data, to be used in capturing data at the receiver Data inputs, outputs, and DM are sy...

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SeekIC No. : 004333772 Detail

EDD5104ADTA: Features: Power supply: VDD, VDDQ = 2.5V ± 0.2V Data Rate: 333Mbps/266Mbps (max.) Double Data Rate architecture; two data transfers per clock cycle Bi-directional, data strobe (DQS) is transmitted /...

floor Price/Ceiling Price

Part Number:
EDD5104ADTA
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/13

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Product Details

Description



Features:

Power supply:  VDD, VDDQ = 2.5V ± 0.2V
Data Rate: 333Mbps/266Mbps (max.)
Double Data Rate architecture; two data transfers per clock cycle 
Bi-directional, data strobe (DQS) is transmitted /received with data, to be used in capturing data at the receiver 
Data inputs, outputs, and DM are synchronized with DQS
4 internal banks for concurrent operation
DQS is edge aligned with data for READs; center aligned with data for WRITEs
Differential clock inputs (CK and /CK)
DLL aligns DQ and DQS transitions with CK transitions
Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS
Data mask (DM) for write data
Auto precharge option for each burst access
SSTL_2 compatible I/O
Programmable burst length (BL):  2, 4, 8
Programmable /CAS latency (CL): 2, 2.5
Programmable output driver strength: normal/weak
Refresh cycles:  8192 refresh cycles/64ms
   -7.8s maximum average periodic refresh interval 
2 variations of refresh
   -Auto refresh 
   -Self refresh



Pinout

  Connection Diagram


Specifications

Parameter Symbol Rating Unit Note
Voltage on any pin relative to VSS VT -1.0 to +3.6 V  
Supply voltage relative to VSS VDD -1.0 to +3.6 V  
Short circuit output current IOS 50 mA  
Power dissipation PD 1.0 W  
Operating ambient temperature TA 0 to +70 °C  
Storage temperature Tstg -55 to +125 °C  



Description

The EDD5104AD, the EDD5108AD and the EDD5116AD are 512M bits Double Data Rate (DDR) SDRAM.  Read and write operations are performed at the cross points of the CK and the /CK. This high-speed data transfer EDD5104AD, the EDD5108AD and the EDD5116AD is realized by the 2 bits prefetch-pipelined architecture.  Data strobe (DQS) both for read and write are available for high speed and reliable data bus design. By setting extended mode register, the on-chip Delay Locked Loop (DLL) can be set enable or disable.  It is packaged in standard 66-pin plastic TSOP (II).


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