Features: • 240-pin socket type dual in line memory module (DIMM) -PCB height: 30.0mm -Lead pitch: 1.0mm -Lead-free• 1.8V power supply• Data rate: 533Mbps/400Mbps (max.)• 1.8 V (SSTL_18 compatible) I/O• Double-data-rate architecture: two data transfers per clock cycle...
EBE21RD4ABHA: Features: • 240-pin socket type dual in line memory module (DIMM) -PCB height: 30.0mm -Lead pitch: 1.0mm -Lead-free• 1.8V power supply• Data rate: 533Mbps/400Mbps (max.)• 1.8...
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PinoutDescriptionFeatures of the EBE20AE4ABFA-6E-E are:(1)double-data-rate architecture; two data ...
PinoutSpecificationsDensity: 2GB Organization256M words x 72 bits, 1 rank Mounting 18 pieces o...
PinoutDescriptionFeatures of the EBE20AE4ACWA are:(1)double-data-rate architecture; two data trans...
Parameter | Symbol | Value | Unit | Note |
Voltage on any pin relative to VSS | VT | -0.5 to +2.3 | V | |
Supply voltage relative to VSS | VDD | -0.5 to +2.3 | V | |
Short circuit output current | IOS | 50 | mA | |
Power dissipation | PD | 18 | W | |
Operating ambient temperature | TC | 0 to +85 | 1 | |
Storage temperature | Tstg | -55 to +100 |
The EBE21RD4ABHA is a 256M words × 72 bits, 2 ranks DDR2 SDRAM Module, mounting 36 pieces of 512M bits DDR2 SDRAM with sFBGA stacking technology. Read and write operations are performed at the cross points of the CK and the /CK. This highspeed data transfer EBE21RD4ABHA is realized by the 4bits prefetchpipelined architecture. Data strobe (DQS and /DQS) both for read and write are available for high speed and reliable data bus design. By setting extended mode register, the on-chip Delay Locked Loop (DLL) can be set enable or disable. This module EBE21RD4ABHA provides high density mounting without utilizing surface mount technology. Decoupling capacitors are mounted beside each SDRAM on the module board.